ADDITIONAL FEATURE:  UL RECOGNIZED

AVALANCHE ENERGY RATING (EAS):  1300 MJ

CASE CONNECTION:  ISOLATED

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  500 V

DRAIN CURRENT-MAX (ABS) (ID):  50 A

DRAIN CURRENT-MAX (ID):  50 A

DRAIN-SOURCE ON RESISTANCE-MAX:  85 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PUFM-X4

MANUFACTURER:  ADVANCED POWER TECHNOLOGY

MANUFACTURER PART NUMBER:  APT50M85JVR

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  FLANGE MOUNT, R-PUFM-X4

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  FLANGE MOUNT

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  500 W

PULSED DRAIN CURRENT-MAX (IDM):  200 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  NO

TERMINAL FINISH:  NOT SPECIFIED

TERMINAL FORM:  UNSPECIFIED

TERMINAL POSITION:  UPPER

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON