CONFIGURATION: SINGLE
DRAIN CURRENT-MAX (ABS) (ID): 115 MA
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
MANUFACTURER: CHAMPION MICROELECTRONIC CORP
MANUFACTURER PART NUMBER: CMT2N7002G
OPERATING MODE: ENHANCEMENT MODE
OPERATING TEMPERATURE-MAX: 150 °C
PACKAGE DESCRIPTION: ,
POLARITY/CHANNEL TYPE: N-CHANNEL
POWER DISSIPATION-MAX (ABS): 225 MW
SUBCATEGORY: FET GENERAL PURPOSE POWER
SURFACE MOUNT: YES
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