C2M0280120D

C2M0280120D

N-CHANNEL 1200V (1.2KV) 10A (TC) 62.5W (TC) THROUGH HOLE TO-247-3

Call for availability

Manufactured by:

CREE, INC.

Mfr Part#:  C2M0280120D

PACKAGE / CASE:  TO-247-3

PACKAGING:  TUBE

STANDARD PACKAGE:  30

SUPPLIER DEVICE PACKAGE:  TO-247-3

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  10A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  1200V (1.2KV)

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  20V

EXPANDED DESCRIPTION:  N-CHANNEL 1200V (1.2KV) 10A (TC) 62.5W (TC) THROUGH HOLE TO-247-3

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  20.4NC @ 20V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  259PF @ 1000V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  CREE/WOLFSPEED

MANUFACTURER PART NUMBER:  C2M0280120D

MANUFACTURER STANDARD LEAD TIME:  18 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-247-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  62.5W (TC)

RDS ON (MAX) @ ID, VGS:  370 MOHM @ 6A, 20V

SERIES:  Z-FET?

STANDARD PACKAGE:  30

SUPPLIER DEVICE PACKAGE:  TO-247-3

TECHNOLOGY:  SICFET (SILICON CARBIDE)

VGS (MAX):  +25V, -10V

VGS(TH) (MAX) @ ID:  2.8V @ 1.25MA (TYP)

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