CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 10A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 1200V (1.2KV)
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 20V
EXPANDED DESCRIPTION: N-CHANNEL 1200V (1.2KV) 10A (TC) 62.5W (TC) THROUGH HOLE TO-247-3
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 20.4NC @ 20V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 259PF @ 1000V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: CREE/WOLFSPEED
MANUFACTURER PART NUMBER: C2M0280120D
MANUFACTURER STANDARD LEAD TIME: 18 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-247-3
PACKAGING: TUBE
POWER DISSIPATION (MAX): 62.5W (TC)
RDS ON (MAX) @ ID, VGS: 370 MOHM @ 6A, 20V
SERIES: Z-FET?
STANDARD PACKAGE: 30
SUPPLIER DEVICE PACKAGE: TO-247-3
TECHNOLOGY: SICFET (SILICON CARBIDE)
VGS (MAX): +25V, -10V
VGS(TH) (MAX) @ ID: 2.8V @ 1.25MA (TYP)
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