C3M0120100J
N-CHANNEL 1000V 22A (TC) 83W (TC) SURFACE MOUNT D2PAK-7Call for availability
Manufactured by:
Mfr Part#: C3M0120100J
PACKAGE / CASE: TO-263-8, D²PAK (7 LEADS + TAB), TO-263CA
PACKAGING: TUBE
STANDARD PACKAGE: 50
SUPPLIER DEVICE PACKAGE: D2PAK-7
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 22A (TC)
DETAILED DESCRIPTION: N-CHANNEL 1000V 22A (TC) 83W (TC) SURFACE MOUNT D2PAK-7
DRAIN TO SOURCE VOLTAGE (VDSS): 1000V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 15V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 21.5NC @ 15V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 350PF @ 600V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: CREE/WOLFSPEED
MANUFACTURER PART NUMBER: C3M0120100J
MANUFACTURER STANDARD LEAD TIME: 26 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-263-8, D²PAK (7 LEADS + TAB), TO-263CA
PACKAGING: TUBE
POWER DISSIPATION (MAX): 83W (TC)
RDS ON (MAX) @ ID, VGS: 155 MOHM @ 15A, 15V
SERIES: C3M?
STANDARD PACKAGE: 50
SUPPLIER DEVICE PACKAGE: D2PAK-7
TECHNOLOGY: SICFET (SILICON CARBIDE)
VGS (MAX): +15V, -4V
VGS(TH) (MAX) @ ID: 3.5V @ 3MA
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