CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  200MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 50V 200MA (TA) 300MW (TA) SURFACE MOUNT SOT-23-3

DRAIN TO SOURCE VOLTAGE (VDSS):  50V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  50PF @ 10V

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  BSS138-7-F

MANUFACTURER STANDARD LEAD TIME:  24 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  300MW (TA)

RDS ON (MAX) @ ID, VGS:  3.5 OHM @ 220MA, 10V

SUPPLIER DEVICE PACKAGE:  SOT-23-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA

ALTERNATE PARTS:  BSS138Q-7-F