CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 10.5A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 25.8NC @ 8V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 2453PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: DIODES INCORPORATED
MANUFACTURER PART NUMBER: DMN2013UFDE-7
MANUFACTURER STANDARD LEAD TIME: 6 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 6-UDFN EXPOSED PAD
PACKAGING: REEL
POWER DISSIPATION (MAX): 660MW (TA)
RDS ON (MAX) @ ID, VGS: 11 MOHM @ 8.5A, 4.5V
ROHS INFORMATION: ROHS CERT OF COMPLIANCE
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: U-DFN2020-6 (TYPE E)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 1.1V @ 250ΜA
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