Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.3A (TA)
DETAILED DESCRIPTION: N-CHANNEL 20V 1.3A (TA) 500MW (TA) SURFACE MOUNT X2-DFN1006-3
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 1.5V, 4.5V
ENVIRONMENTAL INFORMATION: ROHS, REACH CERT OF COMPLIANCE
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 1.6NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 64.3PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: DIODES INCORPORATED
MANUFACTURER PART NUMBER: DMN2300UFB4-7B
MANUFACTURER STANDARD LEAD TIME: 16 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 3-XFDFN
PACKAGING: REEL
POWER DISSIPATION (MAX): 500MW (TA)
RDS ON (MAX) @ ID, VGS: 175 MOHM @ 300MA, 4.5V
STANDARD PACKAGE: 10,000
SUPPLIER DEVICE PACKAGE: X2-DFN1006-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±8V
VGS(TH) (MAX) @ ID: 950MV @ 250ΜA
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