CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  630MA

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 N-CHANNEL (DUAL)

FAMILY:  TRANSISTORS - FETS, MOSFETS - ARRAYS

GATE CHARGE (QG) @ VGS:  0.74NC @ 5V

INPUT CAPACITANCE (CISS) @ VDS:  12.9PF @ 12V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  DMN61D8LVTQ-7

MANUFACTURER STANDARD LEAD TIME:  5 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER - MAX:  820MW

RDS ON (MAX) @ ID, VGS:  1.8 OHM @ 150MA, 5V

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TSOT-26

VGS(TH) (MAX) @ ID:  2V @ 1MA