Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 9.1A (TA)
DETAILED DESCRIPTION: P-CHANNEL 12V 9.1A (TA) 660MW (TA) SURFACE MOUNT U-DFN2020-6 (TYPE E)
DRAIN TO SOURCE VOLTAGE (VDSS): 12V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 1.2V, 4.5V
ENVIRONMENTAL INFORMATION: ROHS, REACH CERT OF COMPLIANCE
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 42.6NC @ 5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 2953PF @ 4V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: DIODES INCORPORATED
MANUFACTURER PART NUMBER: DMP1022UFDE-7
MANUFACTURER STANDARD LEAD TIME: 20 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 6-UDFN EXPOSED PAD
PACKAGING: REEL
POWER DISSIPATION (MAX): 660MW (TA)
RDS ON (MAX) @ ID, VGS: 16 MOHM @ 8.2A, 4.5V
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: U-DFN2020-6 (TYPE E)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±8V
VGS(TH) (MAX) @ ID: 800MV @ 250ΜA
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