CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  320MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 200V 320MA (TA) 2W (TA) SURFACE MOUNT SOT-223

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  85PF @ 25V

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  ZVN2120GTA

MANUFACTURER STANDARD LEAD TIME:  34 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2W (TA)

RDS ON (MAX) @ ID, VGS:  10 OHM @ 250MA, 10V

SUPPLIER DEVICE PACKAGE:  SOT-223

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3V @ 1MA