CONFIGURATION: SINGLE WITH BUILT-IN DIODE
DS BREAKDOWN VOLTAGE-MIN: 100 V
DRAIN CURRENT-MAX (ID): 500 MA
DRAIN-SOURCE ON RESISTANCE-MAX: 2.8 O
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
JESD-30 CODE: S-XXUC-X4
MANUFACTURER: EFFICIENT POWER CONVERSION
MANUFACTURER PART NUMBER: EPC2038ENGR
NUMBER OF ELEMENTS: 1
NUMBER OF TERMINALS: 4
OPERATING MODE: ENHANCEMENT MODE
PACKAGE BODY MATERIAL: UNSPECIFIED
PACKAGE DESCRIPTION: UNCASED CHIP, S-XXUC-X4
PACKAGE SHAPE: SQUARE
PACKAGE STYLE: UNCASED CHIP
PEAK REFLOW TEMPERATURE (CEL): NOT SPECIFIED
POLARITY/CHANNEL TYPE: N-CHANNEL
TERMINAL FORM: UNSPECIFIED
TERMINAL POSITION: UNSPECIFIED
TIME@PEAK REFLOW TEMPERATURE-MAX (S): NOT SPECIFIED
TRANSISTOR APPLICATION: SWITCHING
TRANSISTOR ELEMENT MATERIAL: GALLIUM NITRIDE
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