CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 20.6A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 600V
EXPANDED DESCRIPTION: N-CHANNEL 600V 20.6A (TC) 208W (TC) THROUGH HOLE TO-220
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 82NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 3175PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: FAIRCHILD/ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: FCP190N60E
MANUFACTURER STANDARD LEAD TIME: 7 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-220-3
PACKAGING: TUBE
POWER DISSIPATION (MAX): 208W (TC)
RDS ON (MAX) @ ID, VGS: 190 MOHM @ 10A, 10V
SERIES: SUPERFET® II
STANDARD PACKAGE: 50
SUPPLIER DEVICE PACKAGE: TO-220
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 3.5V @ 250ΜA
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