CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.1A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 200V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) @ VGS: 11NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 234PF @ 100V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR/FAIRCHILD
MANUFACTURER PART NUMBER: FDC2612
MANUFACTURER STANDARD LEAD TIME: 17 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: SOT-23-6 THIN, TSOT-23-6
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.6W (TA)
RDS ON (MAX) @ ID, VGS: 725 MOHM @ 1.1A, 10V
SERIES: POWERTRENCH®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SUPERSOT?-6
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 4.5V @ 250ΜA
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