CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 61A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 200V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
EXPANDED DESCRIPTION: N-CHANNEL 200V 61A (TC) 417W (TC) THROUGH HOLE TO-220-3
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 75NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 3380PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: FAIRCHILD/ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: FDP61N20
MANUFACTURER STANDARD LEAD TIME: 6 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-220-3
PACKAGING: TUBE
POWER DISSIPATION (MAX): 417W (TC)
RDS ON (MAX) @ ID, VGS: 41 MOHM @ 30.5A, 10V
SERIES: UNIFET?
STANDARD PACKAGE: 50
SUPPLIER DEVICE PACKAGE: TO-220-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±30V
VGS(TH) (MAX) @ ID: 5V @ 250ΜA
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