FQB17P10TM

FQB17P10TM

P-CHANNEL 100V 16.5A (TC) 3.75W (TA), 100W (TC) SURFACE MOUNT D2PAK

Call for availability

Manufactured by:

FAIRCHILD SEMICONDUCTOR

Mfr Part#:  FQB17P10TM

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

STANDARD PACKAGE:  800

SUPPLIER DEVICE PACKAGE:  D2PAK

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  16.5A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

EXPANDED DESCRIPTION:  P-CHANNEL 100V 16.5A (TC) 3.75W (TA), 100W (TC) SURFACE MOUNT D2PAK

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  39NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1100PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  FAIRCHILD/ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FQB17P10TM

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.75W (TA), 100W (TC)

RDS ON (MAX) @ ID, VGS:  190 MOHM @ 8.25A, 10V

SERIES:  QFET®

STANDARD PACKAGE:  800

SUPPLIER DEVICE PACKAGE:  D2PAK

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  4V @ 250ΜA

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