CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 9.5A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 600V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) @ VGS: 57NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 2040PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR/FAIRCHILD
MANUFACTURER PART NUMBER: FQPF10N60C
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-220-3 FULL PACK
PACKAGING: TUBE
POWER DISSIPATION (MAX): 50W (TC)
RDS ON (MAX) @ ID, VGS: 730 MOHM @ 4.75A, 10V
SERIES: QFET®
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: TO-220F
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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