FQU13N06LTU
N-CHANNEL 60V 11A (TC) 2.5W (TA), 28W (TC) THROUGH HOLE I-PAKCall for availability
Manufactured by:
Mfr Part#: FQU13N06LTU
PACKAGE / CASE: TO-251-3 SHORT LEADS, IPAK, TO-251AA
PACKAGING: TUBE
STANDARD PACKAGE: 70
SUPPLIER DEVICE PACKAGE: I-PAK
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 11A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 5V, 10V
EXPANDED DESCRIPTION: N-CHANNEL 60V 11A (TC) 2.5W (TA), 28W (TC) THROUGH HOLE I-PAK
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 6.4NC @ 5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 350PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: FAIRCHILD/ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: FQU13N06LTU
MANUFACTURER STANDARD LEAD TIME: 13 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-251-3 SHORT LEADS, IPAK, TO-251AA
PACKAGING: TUBE
POWER DISSIPATION (MAX): 2.5W (TA), 28W (TC)
RDS ON (MAX) @ ID, VGS: 115 MOHM @ 5.5A, 10V
SERIES: QFET®
STANDARD PACKAGE: 70
SUPPLIER DEVICE PACKAGE: I-PAK
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 2.5V @ 250ΜA
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