CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  100 V

DRAIN CURRENT-MAX (ABS) (ID):  12 A

DRAIN CURRENT-MAX (ID):  12 A

DRAIN-SOURCE ON RESISTANCE-MAX:  300 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

FEEDBACK CAP-MAX (CRSS):  300 PF

JEDEC-95 CODE:  TO-220AB

JESD-30 CODE:  R-PSFM-T3

JESD-609 CODE:  E0

MANUFACTURER:  HARRIS SEMICONDUCTOR

MANUFACTURER PART NUMBER:  RFP12P10

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  FLANGE MOUNT, R-PSFM-T3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  FLANGE MOUNT

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY/CHANNEL TYPE:  P-CHANNEL

POWER DISSIPATION AMBIENT-MAX:  75 W

POWER DISSIPATION-MAX (ABS):  75 W

PULSED DRAIN CURRENT-MAX (IDM):  30 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  NO

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  THROUGH-HOLE

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON

TURN-OFF TIME-MAX (TOFF):  450 NS

TURN-ON TIME-MAX (TON):  235 NS