ADDITIONAL FEATURE:  AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

AVALANCHE ENERGY RATING (EAS):  310 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  40 V

DRAIN CURRENT-MAX (ABS) (ID):  42 A

DRAIN CURRENT-MAX (ID):  42 A

DRAIN-SOURCE ON RESISTANCE-MAX:  5.5 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-251AA

JESD-30 CODE:  R-PSIP-T3

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  AUIRFU4104

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  175 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  IN-LINE, R-PSIP-T3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  IN-LINE

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  140 W

PULSED DRAIN CURRENT-MAX (IDM):  480 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  NO

TERMINAL FORM:  THROUGH-HOLE

TERMINAL POSITION:  SINGLE

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON