ADDITIONAL FEATURE:  ULTRA-LOW RESISTANCE

AVALANCHE ENERGY RATING (EAS):  600 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  25 V

DRAIN CURRENT-MAX (ABS) (ID):  180 A

DRAIN CURRENT-MAX (ID):  46 A

DRAIN-SOURCE ON RESISTANCE-MAX:  0.8 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-MBCC-N3

JESD-609 CODE:  E4

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  BSB008NE2LX

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  METAL

PACKAGE DESCRIPTION:  CHIP CARRIER, R-MBCC-N3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  CHIP CARRIER

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  89 W

PULSED DRAIN CURRENT-MAX (IDM):  400 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  YES

TERMINAL FINISH:  SILVER/NICKEL (AG/NI)

TERMINAL FORM:  NO LEAD

TERMINAL POSITION:  BOTTOM

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON