CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CONFIGURATION: FULL BRIDGE
CURRENT - COLLECTOR (IC) (MAX): 72A
CURRENT - COLLECTOR CUTOFF (MAX): 1MA
DETAILED DESCRIPTION: IGBT MODULE FULL BRIDGE 1200V 72A 350W CHASSIS MOUNT MODULE
INPUT: STANDARD
INPUT CAPACITANCE (CIES) @ VCE: 3.3NF @ 25V
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: BSM50GD120DN2BOSA1
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: CHASSIS MOUNT
NTC THERMISTOR: NO
OPERATING TEMPERATURE: 150°C (TJ)
PACKAGE / CASE: MODULE
POWER - MAX: 350W
STANDARD PACKAGE: 10
SUPPLIER DEVICE PACKAGE: MODULE
VCE(ON) (MAX) @ VGE, IC: 3V @ 15V, 50A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 1200V
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