Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 120MA (TA)
DETAILED DESCRIPTION: N-CHANNEL 600V 120MA (TA) 1.8W (TA) SURFACE MOUNT SOT-223-4
DRAIN TO SOURCE VOLTAGE (VDSS): 600V
FET FEATURE: DEPLETION MODE
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 4.9NC @ 5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 146PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: BSP135H6327XTSA1
MANUFACTURER STANDARD LEAD TIME: 10 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-261-4, TO-261AA
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.8W (TA)
RDS ON (MAX) @ ID, VGS: 45 OHM @ 120MA, 10V
SERIES: SIPMOS®
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: SOT-223-4
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 1V @ 94ΜA
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