CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.8A (TA)
DETAILED DESCRIPTION: N-CHANNEL 60V 1.8A (TA) 1.8W (TA) SURFACE MOUNT PG-SOT223-4
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 17NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 368PF @ 25V
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: BSP295H6327XTSA1
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-261-4, TO-261AA
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.8W (TA)
RDS ON (MAX) @ ID, VGS: 300 MOHM @ 1.8A, 10V
SERIES: SIPMOS®
SUPPLIER DEVICE PACKAGE: PG-SOT223-4
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 1.8V @ 400ΜA
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