CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 660MA (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 200V
EXPANDED DESCRIPTION: N-CHANNEL 200V 660MA (TA) 1.8W (TA) SURFACE MOUNT PG-SOT223-4
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 16.1NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 357PF @ 25V
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: BSP297 E6327
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-261-4, TO-261AA
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.8W (TA)
RDS ON (MAX) @ ID, VGS: 1.8 OHM @ 660MA, 10V
SERIES: SIPMOS®
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: PG-SOT223-4
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 1.8V @ 400ΜA
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