BSP299H6327XUSA1

BSP299H6327XUSA1

N-CHANNEL 500V 400MA (TA) 1.8W (TA) SURFACE MOUNT PG-SOT223-4

Call for availability

Manufactured by:

INFINEON TECHNOLOGIES

Mfr Part#:  BSP299H6327XUSA1

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  PG-SOT223-4

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  400MA (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  500V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

EXPANDED DESCRIPTION:  N-CHANNEL 500V 400MA (TA) 1.8W (TA) SURFACE MOUNT PG-SOT223-4

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  400PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  BSP299H6327XUSA1

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  3 (168 HOURS)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.8W (TA)

RDS ON (MAX) @ ID, VGS:  4 OHM @ 400MA, 10V

SERIES:  SIPMOS®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  PG-SOT223-4

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 1MA

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