CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 21MA (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 600V
FET FEATURE: LOGIC LEVEL GATE, 4.5V DRIVE
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 1NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 28PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: BSS127H6327XTSA2
MANUFACTURER STANDARD LEAD TIME: 12 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER - MAX: 500MW
RDS ON (MAX) @ ID, VGS: 500 OHM @ 16MA, 10V
SERIES: SIPMOS®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: PG-SOT23-3
VGS(TH) (MAX) @ ID: 2.6V @ 8ΜA
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