CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 2.3A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
FET FEATURE: LOGIC LEVEL GATE, 1.8V DRIVE
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 1.7NC @ 2.5V
INPUT CAPACITANCE (CISS) @ VDS: 529PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: BSS806N H6327
MANUFACTURER STANDARD LEAD TIME: 12 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER - MAX: 500MW
RDS ON (MAX) @ ID, VGS: 57 MOHM @ 2.3A, 2.5V
SERIES: OPTIMOS?
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: PG-SOT23-3
VGS(TH) (MAX) @ ID: 750MV @ 11ΜA
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