CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  20A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 60V 20A (TC) 2.1W (TA), 50W (TC) SURFACE MOUNT PG-TSDSON-8

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  33NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2700PF @ 30V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  BSZ110N06NS3GATMA1

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERVDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.1W (TA), 50W (TC)

RDS ON (MAX) @ ID, VGS:  11 MOHM @ 20A, 10V

SERIES:  OPTIMOS?

SIMULATION MODELS:  OPTIMOS? POWER MOSFET 60V N-CHANNEL SPICE MODEL

STANDARD PACKAGE:  5,000

SUPPLIER DEVICE PACKAGE:  PG-TSDSON-8

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 23ΜA