Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
AVALANCHE ENERGY RATING (EAS): 40 MJ
CASE CONNECTION: DRAIN
CONFIGURATION: SINGLE WITH BUILT-IN DIODE
DS BREAKDOWN VOLTAGE-MIN: 250 V
DRAIN CURRENT-MAX (ID): 5 A
DRAIN-SOURCE ON RESISTANCE-MAX: 425 MO
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
JESD-30 CODE: S-PDSO-N5
MANUFACTURER: INFINEON TECHNOLOGIES AG
MANUFACTURER PART NUMBER: BSZ42DN25NS3GATMA1
NUMBER OF ELEMENTS: 1
NUMBER OF TERMINALS: 5
OPERATING MODE: ENHANCEMENT MODE
OPERATING TEMPERATURE-MAX: 150 °C
PACKAGE BODY MATERIAL: PLASTIC/EPOXY
PACKAGE DESCRIPTION: SMALL OUTLINE, S-PDSO-N5
PACKAGE SHAPE: SQUARE
PACKAGE STYLE: SMALL OUTLINE
PBFREE CODE: NO
PEAK REFLOW TEMPERATURE (CEL): NOT SPECIFIED
PIN COUNT: 8
POLARITY/CHANNEL TYPE: N-CHANNEL
PULSED DRAIN CURRENT-MAX (IDM): 20 A
QUALIFICATION STATUS: NOT QUALIFIED
SURFACE MOUNT: YES
TERMINAL FINISH: NOT SPECIFIED
TERMINAL FORM: NO LEAD
TERMINAL POSITION: DUAL
TIME@PEAK REFLOW TEMPERATURE-MAX (S): NOT SPECIFIED
TRANSISTOR APPLICATION: SWITCHING
TRANSISTOR ELEMENT MATERIAL: SILICON
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