CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CONFIGURATION: 2 INDEPENDENT
CURRENT - COLLECTOR CUTOFF (MAX): 5MA
DETAILED DESCRIPTION: IGBT MODULE 2 INDEPENDENT 1200V 5000W CHASSIS MOUNT MODULE
INPUT: STANDARD
INPUT CAPACITANCE (CIES) @ VCE: 86NF @ 25V
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: FF1200R12KE3NOSA1
MANUFACTURER STANDARD LEAD TIME: 36 WEEKS
MOUNTING TYPE: CHASSIS MOUNT
NTC THERMISTOR: NO
OPERATING TEMPERATURE: -40°C ~ 125°C
PACKAGE / CASE: MODULE
POWER - MAX: 5000W
SIMULATION MODELS: IPOSIM SPICE MODEL
STANDARD PACKAGE: 2
SUPPLIER DEVICE PACKAGE: MODULE
VCE(ON) (MAX) @ VGE, IC: 2.15V @ 15V, 1200A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 1200V
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