CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CONFIGURATION:  2 INDEPENDENT

CURRENT - COLLECTOR (IC) (MAX):  370A

CURRENT - COLLECTOR CUTOFF (MAX):  5MA

DETAILED DESCRIPTION:  IGBT MODULE 2 INDEPENDENT 1200V 370A 1950W CHASSIS MOUNT MODULE

INPUT:  STANDARD

INPUT CAPACITANCE (CIES) @ VCE:  20NF @ 25V

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  FF300R12MS4BOSA1

MANUFACTURER STANDARD LEAD TIME:  20 WEEKS

MOUNTING TYPE:  CHASSIS MOUNT

NTC THERMISTOR:  YES

OPERATING TEMPERATURE:  -40°C ~ 125°C

PACKAGE / CASE:  MODULE

POWER - MAX:  1950W

STANDARD PACKAGE:  10

SUPPLIER DEVICE PACKAGE:  MODULE

VCE(ON) (MAX) @ VGE, IC:  3.75V @ 15V, 300A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  1200V