CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CONFIGURATION: 2 INDEPENDENT
CURRENT - COLLECTOR CUTOFF (MAX): 5MA
DETAILED DESCRIPTION: IGBT MODULE 2 INDEPENDENT 1700V 4150W CHASSIS MOUNT MODULE
INPUT: STANDARD
INPUT CAPACITANCE (CIES) @ VCE: 54NF @ 25V
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: FF650R17IE4DB2BOSA1
MANUFACTURER STANDARD LEAD TIME: 26 WEEKS
MOUNTING TYPE: CHASSIS MOUNT
NTC THERMISTOR: YES
OPERATING TEMPERATURE: -40°C ~ 150°C
PACKAGE / CASE: MODULE
POWER - MAX: 4150W
STANDARD PACKAGE: 3
SUPPLIER DEVICE PACKAGE: MODULE
VCE(ON) (MAX) @ VGE, IC: 2.45V @ 15V, 650A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 1700V
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