IGB10N60T

IGB10N60T

SMALL OUTLINE, R-PSSO-G2

Call for availability

Manufactured by:

INFINEON TECHNOLOGIES

Mfr Part#:  IGB10N60T

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PSSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  D2PAK

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CASE CONNECTION:  COLLECTOR

COLLECTOR CURRENT-MAX (IC):  20 A

COLLECTOR-EMITTER VOLTAGE-MAX:  600 V

CONFIGURATION:  SINGLE

GATE-EMITTER THR VOLTAGE-MAX:  5.7 V

GATE-EMITTER VOLTAGE-MAX:  20 V

JEDEC-95 CODE:  TO-263AB

JESD-30 CODE:  R-PSSO-G2

JESD-609 CODE:  E3

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  IGB10N60T

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING TEMPERATURE-MAX:  175 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PSSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  D2PAK

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  110 W

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  INSULATED GATE BIP TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FINISH:  MATTE TIN

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40

TRANSISTOR APPLICATION:  POWER CONTROL

TRANSISTOR ELEMENT MATERIAL:  SILICON

TURN-OFF TIME-NOM (TOFF):  296 NS

TURN-ON TIME-NOM (TON):  21 NS

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