CASE CONNECTION:  COLLECTOR

COLLECTOR CURRENT-MAX (IC):  40 A

COLLECTOR-EMITTER VOLTAGE-MAX:  600 V

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

GATE-EMITTER THR VOLTAGE-MAX:  5.7 V

GATE-EMITTER VOLTAGE-MAX:  20 V

JEDEC-95 CODE:  TO-263AB

JESD-30 CODE:  R-PSSO-G2

JESD-609 CODE:  E3

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  IKB20N60T

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING TEMPERATURE-MAX:  175 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PSSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  D2PAK

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  166 W

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  INSULATED GATE BIP TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  POWER CONTROL

TRANSISTOR ELEMENT MATERIAL:  SILICON

TURN-OFF TIME-NOM (TOFF):  299 NS

TURN-ON TIME-NOM (TON):  36 NS