CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  5.1A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  900V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

EXPANDED DESCRIPTION:  N-CHANNEL 900V 5.1A (TC) 31W (TC) THROUGH HOLE PG-TO220-FP

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  28NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  710PF @ 100V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IPA90R1K2C3

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-220-3 FULL PACK

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  31W (TC)

RDS ON (MAX) @ ID, VGS:  1.2 OHM @ 2.8A, 10V

SERIES:  COOLMOS?

STANDARD PACKAGE:  500

SUPPLIER DEVICE PACKAGE:  PG-TO220-FP

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3.5V @ 310ΜA

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  5.1A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  900V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

EXPANDED DESCRIPTION:  N-CHANNEL 900V 5.1A (TC) 31W (TC) THROUGH HOLE PG-TO220-FP

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  28NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  710PF @ 100V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IPA90R1K2C3

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-220-3 FULL PACK

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  31W (TC)

RDS ON (MAX) @ ID, VGS:  1.2 OHM @ 2.8A, 10V

SERIES:  COOLMOS?

STANDARD PACKAGE:  500

SUPPLIER DEVICE PACKAGE:  PG-TO220-FP

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3.5V @ 310ΜA