AVALANCHE ENERGY RATING (EAS):  420 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  60 V

DRAIN CURRENT-MAX (ID):  34 A

DRAIN-SOURCE ON RESISTANCE-MAX:  1.4 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-263

JESD-30 CODE:  R-PSSO-G6

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  IPB014N06NATMA1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  6

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PSSO-G6

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  TO-263

PBFREE CODE:  NO

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  N-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  720 A

SURFACE MOUNT:  YES

TERMINAL FINISH:  NOT SPECIFIED

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON