AVALANCHE ENERGY RATING (EAS):  375 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  200 V

DRAIN CURRENT-MAX (ID):  84 A

DRAIN-SOURCE ON RESISTANCE-MAX:  11.7 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-263AB

JESD-30 CODE:  R-PSSO-G2

JESD-609 CODE:  E3

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  IPB117N20NFD

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PSSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY/CHANNEL TYPE:  N-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  336 A

SURFACE MOUNT:  YES

TERMINAL FINISH:  MATTE TIN

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR ELEMENT MATERIAL:  SILICON