Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 80A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 40V
EXPANDED DESCRIPTION: N-CHANNEL 40V 80A (TC) 300W (TC) SURFACE MOUNT PG-TO263-3-2
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 148NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 4400PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: IPB80N04S2H4ATMA1
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB
PACKAGING: REEL
POWER DISSIPATION (MAX): 300W (TC)
RDS ON (MAX) @ ID, VGS: 3.7 MOHM @ 80A, 10V
SERIES: OPTIMOS?
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: PG-TO263-3-2
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
ALTERNATE PARTS: FDB8441_F085 FDB8441
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