IPD088N06N3 G
Call for availability
Mfr Part#: IPD088N06N3 G
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: PG-TO252-3
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: PG-TO252-3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 50A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
FET FEATURE: STANDARD
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 48NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 3900PF @ 30V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: IPD088N06N3 G
MANUFACTURER STANDARD LEAD TIME: 8 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
POWER - MAX: 71W
RDS ON (MAX) @ ID, VGS: 8.8 MOHM @ 50A, 10V
SERIES: OPTIMOS?
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: PG-TO252-3
VGS(TH) (MAX) @ ID: 4V @ 34ΜA
CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 50A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
FET FEATURE: STANDARD
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 48NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 3900PF @ 30V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: IPD088N06N3 G
MANUFACTURER STANDARD LEAD TIME: 8 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
POWER - MAX: 71W
RDS ON (MAX) @ ID, VGS: 8.8 MOHM @ 50A, 10V
SERIES: OPTIMOS?
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: PG-TO252-3
VGS(TH) (MAX) @ ID: 4V @ 34ΜA
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