IPD50R950CEBTMA1
N-CHANNEL 500V 4.3A (TC) 34W (TC) SURFACE MOUNT PG-TO252-3Call for availability
Manufactured by:
Mfr Part#: IPD50R950CEBTMA1
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: PG-TO252-3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 4.3A (TC)
DETAILED DESCRIPTION: N-CHANNEL 500V 4.3A (TC) 34W (TC) SURFACE MOUNT PG-TO252-3
DRAIN TO SOURCE VOLTAGE (VDSS): 500V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 13V
FET FEATURE: SUPER JUNCTION
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 10.5NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 231PF @ 100V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: IPD50R950CEBTMA1
MOISTURE SENSITIVITY LEVEL (MSL): 3 (168 HOURS)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
POWER DISSIPATION (MAX): 34W (TC)
RDS ON (MAX) @ ID, VGS: 950 MOHM @ 1.2A, 13V
SERIES: COOLMOS?
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: PG-TO252-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 3.5V @ 100ΜA
ALTERNATE PARTS: IPD50R950CEATMA1
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