IPD60N10S4L12ATMA1
N-CHANNEL 100V 60A (TC) 94W (TC) SURFACE MOUNT PG-TO252-3-313Call for availability
Manufactured by:
Mfr Part#: IPD60N10S4L12ATMA1
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: PG-TO252-3-313
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 60A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 100V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
EXPANDED DESCRIPTION: N-CHANNEL 100V 60A (TC) 94W (TC) SURFACE MOUNT PG-TO252-3-313
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 49NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 3170PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: IPD60N10S4L12ATMA1
MANUFACTURER STANDARD LEAD TIME: 26 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
POWER DISSIPATION (MAX): 94W (TC)
RDS ON (MAX) @ ID, VGS: 12 MOHM @ 60A, 10V
SERIES: AUTOMOTIVE, AEC-Q101, HEXFET®
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: PG-TO252-3-313
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±16V
VGS(TH) (MAX) @ ID: 2.1V @ 46ΜA
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