IPD65R660CFDBTMA1
N-CHANNEL 650V 6A (TC) 62.5W (TC) SURFACE MOUNT PG-TO252-3Call for availability
Manufactured by:
Mfr Part#: IPD65R660CFDBTMA1
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: PG-TO252-3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 6A (TC)
DETAILED DESCRIPTION: N-CHANNEL 650V 6A (TC) 62.5W (TC) SURFACE MOUNT PG-TO252-3
DRAIN TO SOURCE VOLTAGE (VDSS): 650V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 22NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 615PF @ 100V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: IPD65R660CFDBTMA1
MANUFACTURER STANDARD LEAD TIME: 26 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
POWER DISSIPATION (MAX): 62.5W (TC)
RDS ON (MAX) @ ID, VGS: 660 MOHM @ 2.1A, 10V
SERIES: COOLMOS?
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: PG-TO252-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 4.5V @ 200ΜA
ALTERNATE PARTS: IPD65R600E6ATMA1
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