ADDITIONAL FEATURE:  LOGIC LEVEL COMPATIBLE

AVALANCHE ENERGY RATING (EAS):  100 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  55 V

DRAIN CURRENT-MAX (ABS) (ID):  20 A

DRAIN CURRENT-MAX (ID):  20 A

DRAIN-SOURCE ON RESISTANCE-MAX:  35 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PDSO-F6

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  IPG20N06S2L-35

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  6

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  175 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-F6

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  8

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  65 W

PULSED DRAIN CURRENT-MAX (IDM):  80 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  YES

TERMINAL FORM:  FLAT

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR ELEMENT MATERIAL:  SILICON