IPI041N12N3GAKSA1
N-CHANNEL 120V 120A (TC) 300W (TC) THROUGH HOLE PG-TO262-3Call for availability
Manufactured by:
Mfr Part#: IPI041N12N3GAKSA1
PACKAGE / CASE: TO-262-3 LONG LEADS, I²PAK, TO-262AA
PACKAGING: TUBE
STANDARD PACKAGE: 500
SUPPLIER DEVICE PACKAGE: PG-TO262-3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 120A (TC)
DETAILED DESCRIPTION: N-CHANNEL 120V 120A (TC) 300W (TC) THROUGH HOLE PG-TO262-3
DRAIN TO SOURCE VOLTAGE (VDSS): 120V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 211NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 13800PF @ 60V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: IPI041N12N3GAKSA1
MANUFACTURER STANDARD LEAD TIME: 14 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-262-3 LONG LEADS, I²PAK, TO-262AA
PACKAGING: TUBE
POWER DISSIPATION (MAX): 300W (TC)
RDS ON (MAX) @ ID, VGS: 4.1 MOHM @ 100A, 10V
SERIES: OPTIMOS?
STANDARD PACKAGE: 500
SUPPLIER DEVICE PACKAGE: PG-TO262-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 4V @ 270ΜA
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