CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 31.2A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 650V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
EXPANDED DESCRIPTION: N-CHANNEL 650V 31.2A (TC) 277.8W (TC) THROUGH HOLE PG-TO247-3
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 118NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 3240PF @ 100V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: IPW65R110CFD
MANUFACTURER STANDARD LEAD TIME: 16 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-247-3
PACKAGING: TUBE
POWER DISSIPATION (MAX): 277.8W (TC)
RDS ON (MAX) @ ID, VGS: 110 MOHM @ 12.7A, 10V
SERIES: COOLMOS?
STANDARD PACKAGE: 30
SUPPLIER DEVICE PACKAGE: PG-TO247-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 4.5V @ 1.3MA
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