CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2.9A

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 P-CHANNEL (DUAL)

GATE CHARGE (QG) (MAX) @ VGS:  9.6NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  650PF @ 16V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IRF5810TRPBF

MOISTURE SENSITIVITY LEVEL (MSL):  2 (1 YEAR)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER - MAX:  960MW

RDS ON (MAX) @ ID, VGS:  90 MOHM @ 2.9A, 4.5V

SERIES:  HEXFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  6-TSOP

VGS(TH) (MAX) @ ID:  1.2V @ 250ΜA