Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 9.3A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 200V
EXPANDED DESCRIPTION: N-CHANNEL 200V 9.3A (TC) 82W (TC) SURFACE MOUNT D2PAK
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 35NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 575PF @ 25V
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: IRF630NS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB
PACKAGING: TUBE
POWER DISSIPATION (MAX): 82W (TC)
RDS ON (MAX) @ ID, VGS: 300 MOHM @ 5.4A, 10V
SERIES: HEXFET®
STANDARD PACKAGE: 200
SUPPLIER DEVICE PACKAGE: D2PAK
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
ALTERNATE PARTS: IRF630NSTRLPBF
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