IRF6898MTRPBF
N-CHANNEL 25V 35A (TA), 213A (TC) 2.1W (TA), 78W (TC) SURFACE MOUNT DIRECTFET? MXCall for availability
Manufactured by:
Mfr Part#: IRF6898MTRPBF
PACKAGE / CASE: DIRECTFET? ISOMETRIC MX
PACKAGING: REEL
STANDARD PACKAGE: 4,800
SUPPLIER DEVICE PACKAGE: DIRECTFET? MX
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 35A (TA), 213A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 25V
EXPANDED DESCRIPTION: N-CHANNEL 25V 35A (TA), 213A (TC) 2.1W (TA), 78W (TC) SURFACE MOUNT DIRECTFET? MX
FET FEATURE: SCHOTTKY DIODE (BODY)
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 62NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 5435PF @ 13V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: IRF6898MTRPBF
MANUFACTURER STANDARD LEAD TIME: 12 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -40°C ~ 150°C (TJ)
PACKAGE / CASE: DIRECTFET? ISOMETRIC MX
PACKAGING: REEL
POWER DISSIPATION (MAX): 2.1W (TA), 78W (TC)
RDS ON (MAX) @ ID, VGS: 1.1 MOHM @ 35A, 10V
SERIES: HEXFET®
STANDARD PACKAGE: 4,800
SUPPLIER DEVICE PACKAGE: DIRECTFET? MX
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 2.1V @ 100ΜA
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