SPECIFICATION
DRAIN CURRENT-MAX (ABS) (ID): 2.3 A
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
MANUFACTURER: INFINEON TECHNOLOGIES AG
MANUFACTURER PART NUMBER: IRF7105
OPERATING TEMPERATURE-MAX: 150 °C
PACKAGE DESCRIPTION: ,
POLARITY/CHANNEL TYPE: N-CHANNEL AND P-CHANNEL
POWER DISSIPATION-MAX (ABS): 2 W
SUBCATEGORY: OTHER TRANSISTORS
SURFACE MOUNT: YES
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