CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  8.3A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 100V 8.3A (TA) 2.5W (TA) SURFACE MOUNT 8-SO

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  39NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1640PF @ 25V

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IRF7853PBF

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  2.5W (TA)

RDS ON (MAX) @ ID, VGS:  18 MOHM @ 8.3A, 10V

SERIES:  HEXFET®

SUPPLIER DEVICE PACKAGE:  8-SO

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4.9V @ 100ΜA

ALTERNATE PARTS:  IRF7853TRPBF